Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system. (April 2023)

• Record Type: Journal Article
• Authors: Kim, Chaeun; Lee, Yunseok; Kim, Sunghun; Kang, Myounggon; Kim, Sungjun
• Is Part Of: Materials science in semiconductor processing. Volume 157(2023)
• Publication Date: 2023-04
• Subjects: AI semiconductor -- Neural network -- Neuromorphic system -- Memristor -- Resistive switching; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2023.107314
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this article, we demonstrate the bio-inspired synaptic features of the TiN/ZrOx /Pt capacitor structure for neuromorphic engineering. The chemical and material compositions and the thicknesses of each of the layers are verified by using transmission electron microscopy (TEM) images and energy-dispersive X-ray spectroscopy (EDS) maps. Stable resistive switching with a low set voltage (∼1 V) was determined by scanning the DC I–V curves of many cells. The DC endurance of ∼10 4 cycles and retention (10, 000 s) in five states was achieved. Multi-level cells (MLC) characteristics were achieved based on the compliance current and reset stop voltage in DC sweep and pulses. Finally, we emulated paired-pulse facilitation (PPF), paired-pulse depression (PPD), electric excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) of the artificial synapse by using the RRAM device.