Cite
MLA Citation
Yihan Zhu and Takashi Ohsawa. “A gate leakage current-powered loadless 4T SRAM with immunity against random dopant fluctuation and surface roughness in silicon-silicon dioxide interface.” Japanese journal of applied physics, vol. 62, 2023, p. . http://access.bl.uk/ark:/81055/vdc_100172208821.0x000062