Nitrate-processing and characterization of a cobalt-doped barium tin oxide perovskite: Magnetic, transport and photoelectrochemical properties. (February 2015)
- Record Type:
- Journal Article
- Title:
- Nitrate-processing and characterization of a cobalt-doped barium tin oxide perovskite: Magnetic, transport and photoelectrochemical properties. (February 2015)
- Main Title:
- Nitrate-processing and characterization of a cobalt-doped barium tin oxide perovskite: Magnetic, transport and photoelectrochemical properties
- Authors:
- Cherifi, K.
Allalou, N.
Rekhila, G.
Trari, M.
Bessekhouad, Y. - Abstract:
- Abstract: The perovskite BaSn0.95 Co0.05 O3− δ, prepared by nitrate route, crystallizes in a cubic symmetry with a slight isotropic contraction of the host lattice. The oxygen crystal field splits the Co 3+ : 3d orbital by a value of 2.02 eV with a low spin configuration of Co 3+ ( t 2g 6 e g 0 ). The average magnetic susceptibility (~2×10 −5 emu cgs mol −1 ) is temperature independent, in conformity with itinerant electrons behavior. The sample is nominally non-stochiometric and the conductivity follows a thermally activated hopping of lattice polaron with an activation energy of 19 meV. The thermal variation of the thermo-power suggests a finite density of states at the Fermi level. The zero temperature conductivity is finite and the charge carriers in localized states are thermally excited into extended states above the mobility edge. A variable range hopping is predicted at low temperature from the non-linearity of ln( σ ) versus T −1 plot while the hump observed near 25 K is ascribed to the phonon drag. The photo-electrochemical characterization in KOH medium indicates p type behavior with a flat band of −0.21 V SCE and a donor density of 6.95×10 20 cm −3 . The electrochemical impedance spectroscopy is undertaken and the response is modeled by an equivalent circuit with the predominance of the bulk contribution. The depressed semicircle is attributed to the faradic charge transfer with a constant phase element (CPE) while the straight line at low frequencies is due toAbstract: The perovskite BaSn0.95 Co0.05 O3− δ, prepared by nitrate route, crystallizes in a cubic symmetry with a slight isotropic contraction of the host lattice. The oxygen crystal field splits the Co 3+ : 3d orbital by a value of 2.02 eV with a low spin configuration of Co 3+ ( t 2g 6 e g 0 ). The average magnetic susceptibility (~2×10 −5 emu cgs mol −1 ) is temperature independent, in conformity with itinerant electrons behavior. The sample is nominally non-stochiometric and the conductivity follows a thermally activated hopping of lattice polaron with an activation energy of 19 meV. The thermal variation of the thermo-power suggests a finite density of states at the Fermi level. The zero temperature conductivity is finite and the charge carriers in localized states are thermally excited into extended states above the mobility edge. A variable range hopping is predicted at low temperature from the non-linearity of ln( σ ) versus T −1 plot while the hump observed near 25 K is ascribed to the phonon drag. The photo-electrochemical characterization in KOH medium indicates p type behavior with a flat band of −0.21 V SCE and a donor density of 6.95×10 20 cm −3 . The electrochemical impedance spectroscopy is undertaken and the response is modeled by an equivalent circuit with the predominance of the bulk contribution. The depressed semicircle is attributed to the faradic charge transfer with a constant phase element (CPE) while the straight line at low frequencies is due to the Warburg diffusion. … (more)
- Is Part Of:
- Materials science in semiconductor processing. Volume 30(2015:Feb.)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 30(2015:Feb.)
- Issue Display:
- Volume 30 (2015)
- Year:
- 2015
- Volume:
- 30
- Issue Sort Value:
- 2015-0030-0000-0000
- Page Start:
- 571
- Page End:
- 577
- Publication Date:
- 2015-02
- Subjects:
- Perovskite BaSn0.95Co0.05O3−δ -- Thermo-power -- Variable range hopping -- Photo-electrochemical
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2014.10.018 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 25733.xml