Effect of fullerene doping on the electrical properties of P3HT/PCBM layers. (August 2015)

• Record Type: Journal Article
• Authors: Aruna, P.; Suresh, K.; Joseph, C.M.
• Is Part Of: Materials science in semiconductor processing. Volume 36(2015:Aug.)
• Page Start: 7
• Page End: 12
• Publication Date: 2015-08
• Subjects: Organic semiconductors -- P3HT:PCBM -- Thin films -- C60 -- Bi-stability -- Organic memory; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.03.019
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Poly (3-hexylthiophene-2, 5-diyl) (P3HT) and its blend with Phenyl-C61 -Butyric acid-Methyl-Ester (PCBM) and fullerene (C60 ) thin films were prepared and their electrical properties for memory applications were studied. Due to doping, a sharp decrease in the resistance for a P3HT:PCBM:C60 device was observed at around 70 °C which makes it useful for thermal switching applications. Addition of C60 to P3HT:PCBM blend gave a high value for R RESET / R SET in thermal switching. For bias switching, threshold voltage reduces to 1.4 V from 25 V with the addition of C60 to P3HT layer.