Two-step growth of κ-Ga2O3 thin films on 4H-SiC substrates with temperature-varied buffer layers using mist chemical vapor deposition. (1st January 2023)

• Record Type: Journal Article
• Authors: Cho, Seong-Ho; Shin, Yun-Ji; Jeong, Seong-Min; Kwon, Se-Hun; Bae, Si-Young
• Is Part Of: Japanese journal of applied physics. Volume 62:Number 1(2023)
• Publication Date: 2023-01-01
• Subjects: mist CVD -- gallium oxide -- kapa phase -- buffer layer -- two-step growth; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/acb1e6
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Two-step growth of κ -Ga2 O3 thin films on 4H-SiC substrates was attempted with temperature-varied buffer layers via mist chemical vapor deposition. The first-step Ga2 O3 buffer layers affect the phase formation and grain size variation depending on growth temperatures. In the second-step thin-film growth, the κ -Ga2 O3 thin film was grown at a fixed temperature of 500 °C regardless of various buffer layers. Three zones, namely, amorphous, κ phase, and mixed phase, were categorized in the κ -Ga2 O3 thin films according to the buffer growth temperature. High-quality and smooth κ -Ga2 O3 thin films could be achieved through the grain growth competition and slight buffer temperature variation in the two-step growth.