Cite
HARVARD Citation
Loo, R. et al. (2020). Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration. ECS transactions. pp. 157-166. [Online].
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Loo, R. et al. (2020). Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration. ECS transactions. pp. 157-166. [Online].