Sensitivity enhancement in OCD metrology by optimizing azimuth angle based on the RCWA simulation. (February 2023)

• Record Type: Journal Article
• Authors: Choi, Hyunsuk; Lee, Kwangseok; Doh, Jiseong; Jeong, Jaehoon; Kwag, Taeshin; Kim, Minseok; Kim, Yeonjeong; Kim, Jongchul; Yoo, Hyung Keun; Kim, Dae Sin
• Is Part Of: Solid-state electronics. Volume 200(2023)
• Publication Date: 2023-02
• Subjects: FinFET -- MBCFET -- Rigorous coupled wave analysis -- Simulation -- Optical critical dimension -- Optical sensitivity; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108574
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Monitoring process using OCD metrology has been performed with a prefixed and unoptimized azimuth angle. We suggest optimal azimuth angle for FinFET and MBCFET modules based on the RCWA simulation. For FinFET, the optical sensitivity was predicted to improve around 30% at the optimal angle. For MBCFET, simulated optimal point was consistent with the OCD measurement. Abstract: Monitoring process using optical critical dimension (OCD) metrology has been performed with a pre-fixed and unoptimized azimuth angle for all modules. Azimuth angle has a great influence on the optical sensitivity and can be easily tuned by changing the wafer rotation. In this study, we suggest the optimal azimuth angle for both FinFET and MOSFET device based on the rigorous coupled wave analysis (RCWA). For FinFET device, the optical sensitivity at the optimal angle was improved around 30% for two modules compared to that of pre-fixed angle. For MBCFET, we demonstrated that the simulated sensitivity is consistent with experiment and confirmed 10% sensitivity enhancement at 25 degree in experiment.