Macroscopic analysis and design of Si HFGFET gas sensor for sensitive gas detection. (February 2023)

• Record Type: Journal Article
• Authors: Hong, Seongbin; Jeong, Yujeong; Jung, Gyuweon; Shin, Wonjun; Park, Jinwoo; Kim, Donghee; Lee, Chayoung; Lee, Jong-Ho
• Is Part Of: Solid-state electronics. Volume 200(2023)
• Publication Date: 2023-02
• Subjects: Gas sensor -- Horizontal floating-gate -- FET-type -- TCAD device simulation -- Response; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108545
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The effect of structure geometry of HFGFET gas sensors on their gas sensing performance is investigated. Using both TCAD device simulation and actual gas sensing measurement, the macroscopic analysis on HFGFET gas sensors is performed. Utilizing a simplified equivalent circuit of HFGFET gas sensors, we define a new parameter representing a magnitude of gas sensitivity. Gas sensing performance of HFGFET gas sensors is affected by the antenna effect and transconductance. Abstract: In this study, we investigate gas sensing performance of horizontal floating-gate field-effect transistor (HFGFET) gas sensors having different FET channel width and length, and the number and length of FG fingers using both technology computer-aided design (TCAD) device simulation and actual gas sensing measurement. The HFGFET gas sensors have a control-gate (CG) and a FG, which are horizontally interdigitated. An indium oxide (In2 O3 ) film is locally deposited between the CG and FG to be used as a sensing layer. Utilizing a simplified equivalent circuit and electrical characteristics of the HFGFET gas sensors, we define a new parameter G, which represents a magnitude of gas sensitivity. The effect of channel width and length, and the number and length of FG fingers of the HFGFET gas sensors on gas sensitivity is first investigated by TCAD device simulation, and then verified by NO2 and H2S gas sensing measurement.