Performance enhancement of blue light-emitting diodes by using special designed n and p-type doped barriers. (September 2015)

• Record Type: Journal Article
• Authors: Li, Jing; Guo, Zhiyou; Li, Fangzheng; Lin, Hong; Li, Chu; Xiang, Shuli; Zhou, Tengfei; Wan, Nianqing; Liu, Yang
• Is Part Of: Superlattices and microstructures. Volume 85(2015)
• Page Start: 454
• Page End: 460
• Publication Date: 2015-09
• Subjects: InGaN -- Light-emitting diodes (LEDs) -- Carrier distribution -- Special designed -- Barriers; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.06.006
• Languages: English
• ISSNs: 0749-6036

Abstract

Highlights: We proposed a LED with special designed n and p-type doped barriers. The electrical and optical properties of the proposed LED are investigated. The improved performance is attributed to the changes of electrical field in the QWs. The electron confinement and hole injection efficiency of the LED are superior. The EBL can be removed in the proposed LED for better hole transport. Abstract: The characteristics of the nitride-based blue light-emitting diode (LED) by using special designed n and p-type doped barriers have been analyzed numerically in this paper. The internal quantum efficiency (IQE), carrier concentrations in the quantum wells (QWs), energy band diagrams, emission spectra and electrostatic fields are investigated. The simulation results indicate that the proposed LED by using the special designed n and p-type doped barriers has a strong enhancement in the optical output power. The improved performance is mainly attributed to the change of electrical field in the active region, resulting in superior electron confinement and improved hole injection efficiency. Further simulation results also indicate that the proposed LED without the p-AlGaN EBL possesses much better hole uniformity, which is due to the reversed electrostatic field in the last barrier.