Cite
HARVARD Citation
Parisini, A. et al. (2022). Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers. Materials science in semiconductor processing. p. . [Online].
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Parisini, A. et al. (2022). Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers. Materials science in semiconductor processing. p. . [Online].