Formation of nanorod InGaN/GaN multiple quantum wells using nickel nano-masks and dry etching for InGaN-based light-emitting diodes. (February 2015)

• Record Type: Journal Article
• Authors: Yang, G.F.; Xie, F.; Tong, Y.Y.; Chen, P.; Yu, Z.G.; Yan, D.W.; Xue, J.J.; Zhu, H.X.; Guo, Y.; Li, G.H.; Gao, S.M.
• Is Part Of: Materials science in semiconductor processing. Volume 30(2015:Feb.)
• Page Start: 694
• Page End: 706
• Publication Date: 2015-02
• Subjects: Ni nano-mask -- InGaN/GaN -- Nanorod -- LED; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2014.08.044
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In recent years, GaN-based nanorods have attracted considerable interest for potential applications in electronic and optoelectronic devices due to the quantum confinement and strain relaxation effect. Although a host of technologies are emerging for the nanorod structure growth and fabrication, a simple method using self-assembled Ni nano-masks and dry etch to form InGaN/GaN nanorod multiple quantum wells (MQWs) has been developed. In this paper, we briefly review the previous developments of GaN-based nanorods, then the particular technology for the fabrication of nanorod InGaN/GaN MQWs using Ni nano-masks and dry etching has been introduced, and the formation of Ni nano-masks on GaN surface is discussed in detail. Furthermore, various structures of high efficient light emitting diodes (LEDs) based on this method are reviewed, the surface nano-roughed process for InGaN/GaN LEDs and nanorod InGaN/GaN LEDs fabrication using Ni nano-masks have been presented.