Cite
HARVARD Citation
Guo, X. et al. (n.d.). Effect of stacking fault in silicon induced by nanoindentation with MD simulation. Materials science in semiconductor processing. pp. 112-117. [Online].
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Guo, X. et al. (n.d.). Effect of stacking fault in silicon induced by nanoindentation with MD simulation. Materials science in semiconductor processing. pp. 112-117. [Online].