Integration of SiC-1D nanostructures into nano-field effect transistors. (January 2015)

• Record Type: Journal Article
• Authors: Ollivier, M.; Latu-Romain, L.; Salem, B.; Fradetal, L.; Brouzet, V.; Choi, J.-H.; Bano, E.
• Is Part Of: Materials science in semiconductor processing. Volume 29(2015:Jan.)
• Page Start: 218
• Page End: 222
• Publication Date: 2015-01
• Subjects: Silicon carbide -- Nanowire -- Nanotube -- Field-effect transistor; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2014.03.020
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We report on the integration and the electrical transport properties of silicon carbide-based one-dimensional nanostructures into field effect transistors. Different kinds of SiC-based 1D nanostructures have been used: 3C– and 4H–SiC nanowires obtained by a plasma etching process, Si–SiC core–shell nanowires and SiC nanotubes both obtained by a carburization route of silicon nanowires.