Fabrication of vertically conducting near ultraviolet LEDs on SiC substrates. (January 2019)

• Record Type: Journal Article
• Authors: Han, Xu; Zhang, Yuantao; Li, Pengchong; Yan, Long; Deng, Gaoqiang; Chen, Liang; Yu, Ye; Yin, Jingzhi
• Is Part Of: Superlattices and microstructures. Volume 125(2019)
• Page Start: 348
• Page End: 355
• Publication Date: 2019-01
• Subjects: Near ultraviolet -- Distributed bragg reflectors -- Vertically conducting -- Metal organic chemical vapor deposition; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.09.027
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this work, GaN-based vertically conducting near ultraviolet light-emitting diodes (LEDs) were grown on n-SiC substrates by metal-organic chemical vapor deposition. 10 pairs or 20 pairs of Si-doped n-Al0.2 Ga0.8 N/n-GaN distributed Bragg reflectors (DBRs) were used to improve the performance of the LEDs. The central reflected wavelength of the DBRs structures agreed well with the emission wavelength of the LEDs. A 389 nm near ultraviolet electroluminescence (EL) emission peak could be clearly observed in all the LED samples in our study. The EL intensity of LEDs was obviously enhanced because of the application of DBRs. Angle-dependent EL spectra were measured as well. For all the measurement angle region, the near ultraviolet EL emission intensity of the LEDs with DBRs were higher than that of the LED without DBRs. Highlights: Vertically conducting near ultraviolet LEDs were achieved. The electrical conductive distributed Bragg reflectors were applied in LEDs. The angle-dependent characteristics of the LEDs were studied.