(Invited) Technology Breakthrough by Ferroelectric HfO2 for Low Power Logic and Memory Applications. (20th July 2018)

• Record Type: Journal Article
• Authors: Kobayashi, Masaharu
• Is Part Of: ECS transactions. Volume 86:Number 2(2018)
• Page Start: 21
• Page End: 25
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08602.0021ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Internet-of-Things (IoT) edge device has been playing key roles as an intelligent sensor node device. The number of IoT devices will become trillions or even more, which requires low power and energy-efficient integrated device solutions. Ferroelectric HfO2 has been recently discovered and expected to open new paths for the integrated devices. In this paper, we introduce logic and memory applications: (1) Negative capacitance FET as a CMOS logic technology booster, (2) Nonvolatile SRAM as a power management tool, and (3) Ferroelectric tunnel junction as a novel analog memory for neuromorphic computing.