Cite
MLA Citation
Haruna Shiomi et al.. “Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction.” Applied physics express, vol. 14, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100139931220.0x00000e