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HARVARD Citation
Gong, X. et al. (2016). (Invited) Enabling Hetero-Integration of III-V and Ge-Based Transistors on Silicon with Ultra-Thin Buffers Formed by Interfacial Misfit Technique. ECS transactions. pp. 421-437. [Online].
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Gong, X. et al. (2016). (Invited) Enabling Hetero-Integration of III-V and Ge-Based Transistors on Silicon with Ultra-Thin Buffers Formed by Interfacial Misfit Technique. ECS transactions. pp. 421-437. [Online].