Cite
HARVARD Citation
Triyoso, D. et al. (2015). (Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI). ECS transactions. pp. 103-110. [Online].
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Triyoso, D. et al. (2015). (Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI). ECS transactions. pp. 103-110. [Online].