Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications. (15th March 2023)
- Record Type:
- Journal Article
- Title:
- Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications. (15th March 2023)
- Main Title:
- Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications
- Authors:
- Isik, M.
Guler, I.
Gasanly, N.M. - Abstract:
- Abstract: The structural and optical characteristics of NaBi(Mo0.5 W0.5 O4 )2 single crystals grown by Czochralski method were investigated. X-ray diffraction (XRD) pattern exhibited four well-defined peaks related to tetragonal crystalline structure with a space group I41/a . Raman and infrared transmittance spectra were recorded to investigate vibrational properties of the compound. Room temperature transmission spectrum was measured to reveal band gap energy of the crystal. The derivative spectral and absorption coefficient analyses resulted in direct band gap energy of 3.19 and 3.18 eV, respectively. Urbach energy of the crystal was also determined as 0.17 eV from photon energy dependency of absorption coefficient. The structural and optical parameters obtained for NaBi(Mo0.5 W0.5 O4 )2 were compared with the parameters of the NaBi(XO4 )2 (X: Mo, W) compounds to understand the effect of the composition on the studied properties. The reported characteristics of NaBi(Mo0.5 W0.5 O4 )2 point out that the compound has significant potential to be used in optoelectronic devices. Graphical abstract: Image 1 Highlights: NaBi(Mo0.5 W0.5 O4 )2 single crystals were grown by Czochralski method. XRD pattern reveals the well-defined tetragonal crystal structure. The absorption coefficient analysis revealed the direct band gap energy as 3.18 eV. Urbach energy of the crystal was found as 0.17 eV. NaBi(Mo0.5 W0.5 O4 )2 may be a potential candidate for optoelectronic devices.
- Is Part Of:
- Materials science in semiconductor processing. Volume 156(2023)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 156(2023)
- Issue Display:
- Volume 156, Issue 2023 (2023)
- Year:
- 2023
- Volume:
- 156
- Issue:
- 2023
- Issue Sort Value:
- 2023-0156-2023-0000
- Page Start:
- Page End:
- Publication Date:
- 2023-03-15
- Subjects:
- NaBi(MoO4)2 -- NaBi(WO4)2 -- optical properties -- optoelectronic applications
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2022.107257 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 25751.xml