Highly responsive SnSe/GaN heterostructure-based UVC-SWIR broadband photodetector. (15th March 2023)

• Record Type: Journal Article
• Authors: Vashishtha, Pargam; Kumar, Manoj; Prajapat, Pukhraj; Ahmed, Jahangeer; Singh, Vidya Nand; Gupta, Govind
• Is Part Of: Materials science in semiconductor processing. Volume 156(2023)
• Publication Date: 2023-03-15
• Subjects: SnSe -- GaN -- Heterostructure -- UVC-SWIR -- Photodetector -- Edge Pt-MSM contacts; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.107277
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Broadband photodetection spans the ultraviolet-C (250 nm) to shortwave-infrared (1250 nm) range is essential and desirable for various applications such as optical communication, spectral switching, and memory storage. We have utilized ultraviolet-responsive gallium nitride (GaN) and Tin selenide (SnSe) as the infrared-activated material to fabricate a broadband heterojunction-based optical detector. Through SnSe/GaN heterostructure, the fabricated detector combines GaN's ultraviolet to visible, with SnSe's visible to shortwave-infrared detectability. The device also possesses great responsiveness and a low dark current due to edge contact geometry, which directly accesses the heterostructure interface for both materials. The fabricated device functions well from the ultraviolet-C to the shortwave-infrared region, exhibiting the highest responsivity of 128 AW -1 and the lowest noise equivalent power of 5.2 × 10 −14 WHz −1/2, the quantum efficiency ∼5 × 10 4 % with a response time ∼800 μs for ultraviolet illumination while the highest responsivity of 6.06 AW -1 and noise equivalent power of 1 × 10 −12 WHz −1 for the device under infrared illumination. The research will open up new possibilities for optoelectronic applications utilizing heterostructure-based wideband detection. Graphical abstract: Image 1 Highlights: To achieve SnSe/GaN unique structure, deposition of SnSe on the epitaxial GaN structure. The MSM Pt-edge contact were fabricated to enables the device to respond fast. Broadband (UVC – SWIR) photodetector with a high responsivity of 128 AW -1 . Broadband photodetector with high quantum efficiency and capability to detect weak optical signals ∼0.5 fW.