Coupling a phase field model with an electro-thermal solver to simulate PCM intermediate resistance states for neuromorphic computing. (February 2023)

• Record Type: Journal Article
• Authors: Cueto, O.; Trabelsi, A.; Cagli, C.; Cyrille, M.C.
• Is Part Of: Solid-state electronics. Volume 200(2023)
• Publication Date: 2023-02
• Subjects: Neuromorphic computing -- PCM -- Resistance states -- Progressive crystallization -- Simulation -- Phase field model; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108542
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: A key attribute for Phase-Change Memories to be used for neuromorphic computing is the possibility to create intermediate resistance states by the progressive crystallization during the successive application of set pulses. To complete an experimental approach, we studied progressive crystallization by simulation. Insight on the real mechanisms of progressive crystallization is obtained by coupling Joule heating, diffusion of heat and a phase change model relying on the Phase Field Method. Highlights: Intermediate resistance states in Phase Change Memories for neuromorphic computing. Coupling the Phase Field method with an Finite Element electro-thermal solver for PCM. Insights on real mechanism of progressive crystallization.