Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability. (1st October 2022)

• Record Type: Journal Article
• Authors: Zhang, Shiqing; Song, Bing; Jia, Shujing; Cao, Rongrong; Liu, Sen; Xu, Hui; Li, Qingjiang
• Is Part Of: Journal of semiconductors. Volume 43:Number 10(2022)
• Publication Date: 2022-10-01
• Subjects: ovonic threshold switch -- selector -- GeSe -- multilayer structure -- endurance -- stability; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/43/10/104101
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Selector devices are indispensable components of large-scale memristor array systems. The thereinto, ovonic threshold switching (OTS) selector is one of the most suitable candidates for selector devices, owing to its high selectivity and scalability. However, OTS selectors suffer from poor endurance and stability which are persistent tricky problems for application. Here, we report on a multilayer OTS selector based on simple GeSe and doped-GeSe. The experimental results show improving selector performed extraordinary endurance up to 10 10 and the fluctuation of threshold voltage is 2.5%. The reason for the improvement may lie in more interface states which strengthen the interaction among individual layers. These developments pave the way towards tuning a new class of OTS materials engineering, ensuring improvement of electrical performance.