Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform. (1st October 2022)

• Record Type: Journal Article
• Authors: Zhang, Hongchao; Ma, Xiangyue; Jiang, Chuanpeng; Yin, Jialiang; Lyu, Shuqin; Lu, Shiyang; Shang, Xiantao; Man, Bowen; Zhang, Cong; Li, Dandan; Li, Shuhui; Chen, Wenjing; Liu, Hongxi; Wang, Gefei; Cao, Kaihua; Wang, Zhaohao; Zhao, Weisheng
• Is Part Of: Journal of semiconductors. Volume 43:Number 10(2022)
• Publication Date: 2022-10-01
• Subjects: SOT MTJ -- low switching current densities -- 200-mm-wafer platform -- endurance -- data retention; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/43/10/102501
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: We demonstrate in-plane field-free-switching spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices that are capable of low switching current density, fast speed, high reliability, and, most importantly, manufactured uniformly by the 200-mm-wafer platform. The performance of the devices is systematically studied, including their magnetic properties, switching behaviors, endurance and data retention. The successful integration of SOT devices within the 200-mm-wafer manufacturing platform provides a feasible way to industrialize SOT MRAMs. It is expected to obtain excellent performance of the devices by further optimizing the MTJ film stacks and the corresponding fabrication processes in the future.