Edge-TCT evaluation of high voltage-CMOS test structures with unprecedented breakdown voltage for high radiation tolerance. (1st December 2022)

• Record Type: Journal Article
• Authors: Wade, B.; Franks, M.; Hammerich, J.; Karim, N.; Powell, S.; Vilella, E.; Zhang, C.
• Is Part Of: Journal of instrumentation. Volume 17:Number 12(2022)
• Publication Date: 2022-12-01
• Subjects: Particle tracking detectors (Solid-state detectors) -- Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc.) -- Radiation-hard detectors -- Solid state detectors; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/17/12/C12017
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: This paper presents the edge Transient Current Technique (eTCT) measurements of passive test-structures on the UKRI-MPW0 pixel chip, a 280 µm thick proof-of-concept High Voltage-CMOS (HV-CMOS) device designed and fabricated in the LFoundry 150 nm technology node with a nominal substrate resistivity of 1.9 kΩ cm. Samples were irradiated up to 1 × 10 16 1 MeV neq cm −2 with neutrons to observe the change in depletion depth and effective doping concentration with irradiation. A depletion depth of the sensor was found to be ≈50 µm at ≈−400 V at 1 × 10 16 1 MeV neq cm −2 . A stable damage introduction rate ( g c ) was also calculated to be 0.011 ± 0.002 cm −1 .