Corrigendum to "Incorporation of N in p-type Zn–N-doped SnO2 films by varying N2 content in sputtering gas mixture" [Mater. Sci. Semiconductor Process. 155 (2023) 107230]. (1st March 2023)

Record Type:: Journal Article
Title:: Corrigendum to "Incorporation of N in p-type Zn–N-doped SnO2 films by varying N2 content in sputtering gas mixture" [Mater. Sci. Semiconductor Process. 155 (2023) 107230]. (1st March 2023)
Main Title:: Corrigendum to "Incorporation of N in p-type Zn–N-doped SnO2 films by varying N2 content in sputtering gas mixture" [Mater. Sci. Semiconductor Process. 155 (2023) 107230]
Authors:: Dan, Ho Kim
Pham, Minh Khang
Dang, Huu Phuc
Quach, Uy Lap
Dao, Anh Tuan
Le, Tran
Abstract:
Is Part Of:: Materials science in semiconductor processing. Volume 155(2023)
Journal:: Materials science in semiconductor processing
Issue:: Volume 155(2023)
Issue Display:: Volume 155, Issue 2023 (2023)
Year:: 2023
Volume:: 155
Issue:: 2023
Issue Sort Value:: 2023-0155-2023-0000
Page Start:
Page End:
Publication Date:: 2023-03-01
Subjects:: Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152
Journal URLs:: http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗
DOI:: 10.1016/j.mssp.2022.107262 ↗
Languages:: English
ISSNs:: 1369-8001
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store
Ingest File:: 24694.xml