Incorporation of N in p-type Zn-N-doped SnO2 films by varying N2 content in sputtering gas mixture. (1st March 2023)

• Record Type: Journal Article
• Authors: Kim Dan, Ho; Pham, Minh Khang; Dang, Huu Phuc; Quach, Uy Lap; Dao, Anh Tuan; Le, Tran
• Is Part Of: Materials science in semiconductor processing. Volume 155(2023)
• Publication Date: 2023-03-01
• Subjects: p-type Zn−N-doped SnO2 film -- Direct-current magnetron sputtering -- The (200) reflection-cubic phase -- XPS spectra -- The absorption edge redshift -- The photoelectronic effect; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.107230
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: This study investigates a variation of the N2 content in the mixed sputtering gas effects on the optical, electrical, and structural properties of p-type Zn-N-doped SnO2 films. The incorporation of N into the tin oxide lattice of the synthesized films was confirmed by energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD) analysis, ultraviolet–visible (UV–vis) spectroscopy, and Hall measurements. Further, atomic force microscopy, field-emission scanning electron microscopy, and current-voltage characteristics confirmed the substitution of O by N in the SnO2 lattice. The sufficiently large N 3− –O 2− substitution in the SnO2 lattice was confirmed by a (200) cubic plane in the XRD pattern. N 3− –O 2− substitution was also ascertained by the redshift of the UV–vis absorption edge. The crystallinity increased significantly with an increase in N 3− –O 2− substitution in the SnO2 lattice, including an increase in the crystal grain size and a decrease in surface roughness. The optimum N 3− –O 2− substitution for the film synthesized using 80% N2 in the mixed sputtering gas resulted in the best crystal quality. This film showed the highest hole mobility and the greatest increase in the photocurrent of the film/n-Si heterojunction. The excess N-substituted O content in the tin oxide lattice degraded the crystal quality. Therefore, the optimally synthesized film is more suitable for optoelectronic devices. Graphical abstract: Image 1 Highlights: An increase in the N 3− –O 2− substitution in the SnO2 lattice was determined by (200) plane -cubic phase. The optimum N 3− –O 2− substitution in the SnO2 lattice improved the best quality and the highest hole mobility. The best quality and the highest hole mobility resulted in the highest photocurrent of film/Si junction.