Cite
HARVARD Citation
Lee, K. et al. (2016). Improving graphene non‐volatile memory using self‐aligned gate. Electronics letters. 52 (9), pp. 742-744. [Online].
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Lee, K. et al. (2016). Improving graphene non‐volatile memory using self‐aligned gate. Electronics letters. 52 (9), pp. 742-744. [Online].