Acceleration of semiconductor device simulation using compact charge model. (January 2023)

• Record Type: Journal Article
• Authors: Lee, Kwang-Woon; Hong, Sung-Min
• Is Part Of: Solid-state electronics. Volume 199(2023)
• Publication Date: 2023-01
• Subjects: Semiconductor device simulation -- Compact model -- Acceleration; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108526
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: In this work, we propose a method to get an initial guess for the semiconductor device simulation with a compact charge model. By using the obtained initial guess, we can perform the device simulation directly at the target bias condition without a time-consuming bias ramping process. In order to verify our method, rectangular Gate-All-Around (GAA) metal–oxide–semiconductor field-effect transistors (MOSFETs) having a long channel length are considered. Results clearly show that the device simulation can be accelerated through our method. Highlights: A method to predict an initial guess of the drift-diffusion model at a target bias condition is proposed. A compact charge model is used to predict an initial guess. The compact charge model for a 2D MOS structure is numerically solved with the 1D continuity equation. The solution of two coupled equations is used to generate the initial guess.