Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation. (January 2023)

• Record Type: Journal Article
• Authors: Nishimura, T.; Eikyu, K.; Sonoda, K.; Ogata, T.
• Is Part Of: Solid-state electronics. Volume 199(2023)
• Publication Date: 2023-01
• Subjects: Power semiconductor -- SiC -- First principles calculation -- Full-band Monte Carlo simulation; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108503
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The stress response of the drift velocity of 4H-SiC is analyzed by FMBC simulation. In low electric field the drift velocity depends on the curvature at M-point. In high electric fields the stress response becomes small due to the scatterings. Around 1 MV/cm the response increases due to the difference in electron transition. Abstract: SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put into practical use. However, its stress response has not been completely elucidated. In this paper, we analyzed the stress response of the drift velocity of 4H-SiC with a combination of first principles calculation and full-band Monte Carlo simulation. The response decreases with an increase in the electric field except for a hump around 1 MV/cm. The decreasing trend is explained by increasing scattering rates which diminish the effect of the change of the effective mass due to stress. The hump comes from the transition of electrons to band minima with a lighter effective mass.