High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs. (January 2023)

• Record Type: Journal Article
• Authors: Algaidy, S.; Caudevilla, D.; Perez-Zenteno, F.; García-Hernansanz, R.; García-Hemme, E.; Olea, J.; San Andrés, E.; Duarte-Cano, S.; Siegel, J.; Gonzalo, J.; Pastor, D.; del Prado, A.
• Is Part Of: Materials science in semiconductor processing. Volume 153(2023)
• Publication Date: 2023-01
• Subjects: Gallium compounds -- Ion implantation -- Pulsed laser melting -- Supersaturated material -- Titanium; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.107191
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We present a detailed investigation on the formation of supersaturated GaAs using Ti + implantation followed by nanosecond Pulsed Laser Melting (PLM). We have synthesized high-crystal quality supersaturated GaAs layers with concentrations of Ti above the insulator to metal transition (Mott limit). The Ti-implanted concentration depth profiles after PLM obtained by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) show a redistribution of Ti impurities within the first hundred nanometers and superficial concentration up to 1 × 10 21 cm −3 . Raman spectroscopy of these Ti supersaturated, and regrown GaAs samples shows a sharp crystalline peak and tensile strain due to the Ti lattice incorporation. Scanning Transmission Electron Microscopy (STEM) and high-resolution Transmission Electron Microscopy (TEM) images show a good GaAs crystallinity after the PLM process. Energy-Dispersive X-ray Spectroscopy (EDS) reveals an enhanced Ti signal inside bubble-like structures and an appearance of interface oxide layer with all processed samples.