Preparation and up-conversion luminescence of three-dimensional Er3+/Yb3+ co-doped AlN nanowire networks. (January 2023)

• Record Type: Journal Article
• Authors: Wang, Jiaqi; Zou, Hongwei; Zhao, Dongfang; Zhang, Yiyi; Chen, Mei; Zheng, Huiling; Wang, Xuejiao; Wang, Chuang; Wang, Qiushi; Zhu, Ge
• Is Part Of: Materials science in semiconductor processing. Volume 153(2023)
• Publication Date: 2023-01
• Subjects: Rare earth doped -- AlN -- Nanowires -- Up-conversion emission; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.107186
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Up-conversion (UC) nanomaterials have attracted extensive attention due to their unique optical properties and potential in many different applications. Here, novel three-dimensional Er 3+ /Yb 3+ co-doped AlN (AlN:Yb 3+, Er 3+ ) nanowire networks were synthesized for the first time using the arc-discharge process. The branched nanowires in networks show a very regular directional relationship: the included angles of the branches are 60 or 120°. A growth mechanism of nanowire networks was suggested and explained in detail. The AlN:Yb 3+, Er 3+ nanowire networks exhibit the weak green (around 523 and 545 nm) and very intense red (around 662 nm) emissions under 980 nm excitation, which is caused by the 2 H11/2, 4 S3/2 and 4 F9/2 → 4 I15/2 transitions of Er 3+ ions, respectively. The enhanced red emission is mainly due to the cross relaxation resulting from the high doping concentration. In the wide temperature range of 298–548 K, the integrated intensity of red emission varies linearly with temperature, which has a potential application for optical thermometry.