Preparation and electrical properties of Ni-doped InZnO thin film transistors. (January 2023)

• Record Type: Journal Article
• Authors: Yang, Weiguang; Yang, Hui; Su, Jinbao; Zhang, Xiqing
• Is Part Of: Materials science in semiconductor processing. Volume 153(2023)
• Publication Date: 2023-01
• Subjects: Ni doped InZnO -- Thin film transistors -- Radio frequency magnetron sputtering; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.107147
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this work, Ni-doped InZnO (IZO: Ni) thin film transistors (TFTs) with staggered bottom-gate structure were fabricated on SiO2 /Si substrates by radio frequency (RF) magnetron sputtering, and IZO: Ni thin films severed as active layer, Al electrodes were used as the source and drain electrodes. X-ray Diffraction (XRD) results showed that IZO: Ni film was amorphous structure. Transmittance of the deposited sample was higher than 80% in the visible range. Secondary ion mass spectroscopy (SIMS) exhibited a uniform distribution of all the elements in the film. Field emission scanning electron micrograph (FESEM) and Atom force microscopy (AFM) results revealed that the film had a smooth surface and a root-mean-square (RMS) roughness of 0.225 nm. The TFTs annealed at 265 °C in nitrogen atmosphere showed the excellent electrical performance with a high saturation mobility (μSAT ) of 37.2 cm 2 V −1 s −1, a low threshold voltage (VTH ) of 2.5 V, a low subthreshold swing (SS) of 0.39 V/dec, and a high on/off current ratio (Ion /Ioff ) of 4.1 × 10 8 .