Na2S decorated NiOx as effective hole transport layer for inverted planar perovskite solar cells. (January 2023)

• Record Type: Journal Article
• Authors: Yao, Qiannan; Zhao, Liang; Sun, Xuewen; Zhu, Lei; Zhao, Yulong; Qiang, Yinghuai; Song, Jian
• Is Part Of: Materials science in semiconductor processing. Volume 153(2023)
• Publication Date: 2023-01
• Subjects: Perovskite solar cells -- NiOx -- Na2S -- HTL -- Charge transfer; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.107107
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: NiO x have been considered as an excellent material for hole transport layer (HTL) of perovskite solar cells because of its wide band gap, excellent optical transmittance, proper chemical stability and energy level matching with perovskite materials. However, the power conversion efficiency ( PCE ) of inverted perovskite solar cells (PSCs) is hindered by the low conductivity of unmodified NiO x . Here, we reported an operative Na2 S treated NiO x HTL, which could optimize the conductivity of the NiO x layers and the crystallinity of perovskite. The synergistic effect of Na cations and S anions could strengthen the conductivity of the NiO x HTL, improve the interface contact between NiO x and perovskite, and enhance the quality of the perovskite film, so as to boost photoelectricity performance of the device. The carrier dynamics have shown that doping of Na2 S could not only diminish the interface defects of the HTL/perovskite layer, but also improve the hole extraction at the NiO x /perovskite interface. All these factors led to the improvements in short-circuit density ( J sc ), fill factor ( FF ) and PCE of inverted planar perovskite solar cells. Consequently, Na2S-decorated NiOx HTL contributes to a stable device which attains a champion efficiency of 16.9%.