Breaking the subthreshold slope limit in MOSFETs. (December 2022)

• Record Type: Journal Article
• Authors: Cristoloveanu, Sorin; Ghibaudo, Gérard
• Is Part Of: Solid-state electronics. Volume 198(2022)
• Publication Date: 2022-12
• Subjects: Boltzmann limit -- Potential fluctuations -- Mobility -- MOSFET -- Subthreshold slope -- Swing -- Low temperature; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108465
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The paper addresses a common mistake in the literature. Abstract: The Boltzmann limit of the subthreshold swing 2.3kT/q in MOSFETs is a widely-disseminated myth originated from a common amalgam between drain current and mobile charge. We show that the carrier mobility can substantially increase from weak to strong inversion due to the screening of potential fluctuations and Coulomb scattering. The mobility rise enables the current to increase faster than the inversion charge, thus breaking the apparent theoretical limit.