A comparative radiation analysis of reconfigurable memory technologies: FinFET versus bulk CMOS. (November 2022)

• Record Type: Journal Article
• Authors: Azimi, S.; De Sio, C.; Portaluri, A.; Rizzieri, D.; Sterpone, L.
• Is Part Of: Microelectronics and reliability. Volume 138(2022)
• Publication Date: 2022-11
• Subjects: Radiation effects -- Bulk CMOS -- FinFET -- FPGA -- Soft errors -- Proton radiation test; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2022.114733
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This work describes a comparative radiation reliability analysis between two reconfigurable devices with different manufacturing technology: 28 nm CMOS-based and 16 nm FinFET based FPGAs. The analysis is based on a proton radiation test campaign performed at the PSI radiation facility. As application circuit, a multi-core computational engine was implemented on each one of the reconfigurable devices. The radiation sensitivity has been reported in terms of the SEU cross-section of the configuration memory bits. Results have shown a higher sensitivity of 28 nm CMOS with respect to 16 nm FinFET. Moreover, a detailed comparison of detected Single Event Multiple Upsets (SEMUs) clusters for both technology is reported.