Demonstration of integrate-and-fire neuron circuit for spiking neural networks. (December 2022)

• Record Type: Journal Article
• Authors: Woo, Sung Yun; Kang, Won-Mook; Seo, Young-Tak; Lee, Soochang; Kwon, Dongseok; Oh, Seongbin; Bae, Jong-Ho; Lee, Jong-Ho
• Is Part Of: Solid-state electronics. Volume 198(2022)
• Publication Date: 2022-12
• Subjects: Complementary MOSFET -- Integrate-and-fire function -- Neuron circuit -- Voltage level shifter -- Spiking neural networks (SNNs); Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108481
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: An integrate-and-fire (IF) neuron and a voltage level shifter circuit were fabricated and investigated for hardware-based SNN architectures. By observing a membrane potential of the IF neuron circuit, an integration and reset operation are successfully implemented. In the fabricated IF neuron circuit, the number of output spikes are 2, 5, 10, and 20 at t pulses of 0.4 μs, 1 μs, 2 μs and 4 μs, respectively. The firing rate of the neuron circuit linearly increases as t pulse increases. These measurement results demonstrate that the fabricated IF neuron circuit implements IF function and reset operation well with linear activation function. The generation of high voltage pulses (>6 V) for a synaptic weight update are observed through the voltage level shifter circuit. Abstract: An integrate-and-fire (IF) neuron and a voltage level shifter circuit were fabricated and investigated for hardware-based SNN architectures. To verify an IF function of neurons, the fabricated IF neuron circuit consists of a synapse, an integration/reset part, and a fire/trigger circuit. By observing a membrane potential of the IF neuron circuit, an integration and reset operations are successfully implemented. In the fabricated IF neuron circuit, the number of output spikes is 2, 5, 10, and 20 at t pulses of 0.4 μs, 1 μs, 2 μs and 4 μs, respectively. The firing rate of the neuron circuit linearly increases as t pulse increases. These measurement results demonstrate that the fabricated IF neuron circuit implements IF function and reset operation well with linear activation function. For suppression of a gate induced drain leakage (GIDL) at high drain voltages (>6 V), the voltage level shifter consists of MOSFETs with a lightly doped drain (LDD). The generation of high voltage pulses (>6 V) for a synaptic weight update is observed through the voltage level shifter circuit.