Cite
MLA Citation
F. Chiocchetta et al.. “Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs.” Microelectronics and reliability, vol. 138, 2022, p. . http://access.bl.uk/ark:/81055/vdc_100168598643.0x00005c