Cite
HARVARD Citation
Chiocchetta, F. et al. (2022). Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs. Microelectronics and reliability. p. . [Online].
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Chiocchetta, F. et al. (2022). Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs. Microelectronics and reliability. p. . [Online].