Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C. (November 2022)

• Record Type: Journal Article
• Authors: Yu, Qingkui; Cao, Shuang; Lv, He; Sun, Yi; Mo, Rigen; Wang, Qianyuan; Mei, Bo; Zhang, Hongwei; Liu, Chaoming; Yu, Xuefeng
• Is Part Of: Microelectronics and reliability. Volume 138(2022)
• Publication Date: 2022-11
• Subjects: Silicon carbide (SiC) -- Metal-oxide-semiconductor filed effect transistor (MOSFET) -- Total ionizing dose effect, Deep space, High temperature -- Low temperature; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2022.114744
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The influence of temperature on the total ionizing dose response of silicon carbide (SiC) metal-oxide-semiconductor filed effect transistors (MOSFETs) was experimentally studied by γ-rays irradiation at temperatures ranging from −233 °C to 175 °C. Electrical parameters were investigated with Current-Voltage ( I - V ) measurements. Results showed that the threshold voltage shifted toward negative post-irradiation due to the radiation-induced oxide trapped charges. The shift of threshold voltage was a function of irradiation temperature. The shift of threshold voltage increased as temperature decreased. The reason was that there were less annealing for the radiation-induced oxide trapped charges at low temperatures. Highlights: Total ionizing dose effects on SiC MOSFETs were studied at low and high temperature. The influence of temperature was studied at the ranging from −233 °C to 175 °C. The threshold voltage shift to negative at the temperature ranging from −233 °C to 175 °C. The threshold voltage shift was mainly caused by the oxide trapped charges. The anneal of oxide trapped charges at high temperature were more than at low temperature.