Cite
APA Citation
Favero, D., De Santi, C., Mukherjee, K., Borga, M., Geens, K., Chatterjee, U., Bakeroot, B., Decoutere, S., Rampazzo, F., Meneghesso, G., Zanoni, E., & Meneghini, M. (2022). impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors. Microelectronics and reliability, 138, . http://access.bl.uk/ark:/81055/vdc_100168597635.0x00005d