Cite
HARVARD Citation
Favero, D. et al. (2022). Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors. Microelectronics and reliability. p. . [Online].
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Favero, D. et al. (2022). Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors. Microelectronics and reliability. p. . [Online].