Multchip SiC-based compact module for automotive applications: A high speed thermal study. (November 2022)

• Record Type: Journal Article
• Authors: Anoldo, L.; Malta, G.; Mazza, B.; Piccione, G.G.; Calabretta, M.; Russo, S.; Russo, A.; Sitta, A.; Messina, A.; Lionetto, A.; Patanè, S.
• Is Part Of: Microelectronics and reliability. Volume 138(2022)
• Publication Date: 2022-11
• Subjects: Power electronic device -- Silicon carbide -- Thermal mapping -- Automotive -- Reliability; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2022.114700
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Nowadays the increasing demand of high-efficiency power devices for automotive framework, forced the scientific community to develop new technologies capable to operate under intense power loads. Among the broad scenario SiC-based substrates represent a promising solution. This study focuses on a high-speed thermal characterization of a power module designed by STMicroelectronics (ACEPACK DRIVE) with the aim to provide a map of the temperature values reached at the surface upon current-pulse stresses. Thermal images collected on one leg show a symmetrical temperature distribution, with a maximum of around 60 °C on the device metals and ensures that any reliability issues due to the thermo-mechanical stress are avoided. Highlights: The high-speed thermal mapping reveals the maximum temperature and its distributions reached by. ACEPACK DRIVE during a 1 ms and 800 A current pulse. Homogeneity of the thermal distribution among the dies of a switch is key for the module lifetime during its operative use. A simulation model, able to predict temperature during power pulse, has been developed and experimentally validated.