Quasi-vertical diamond temperature sensor by using Schottky–pn junction structure diode. (December 2022)

• Record Type: Journal Article
• Authors: Xie, Wenliang; He, Liang; Ni, Yiqiang; Li, Genzhuang; Wang, Qiliang; Cheng, Shaoheng; Li, Liuan
• Is Part Of: Materials science in semiconductor processing. Volume 152(2023)
• Publication Date: 2022-12
• Subjects: Diamond -- Heterojunction diode -- Electrical transport characteristics -- Temperature sensor; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.107095
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: A Schottky–pn junction structure diode (SPND) has been fabricated on HPHT Ib (001) diamond substrate for temperature sensor application. The forward current-voltage characteristics show an obvious temperature dependency with the turn-on voltages decrease with the increasing temperature. It demonstrates that three types of current transport mechanisms are found at different forward bias voltages. Furthermore, based on the good linear relationship between the turn-on voltages and temperatures, the sensing ability is evaluated at the sub-threshold region. At low current densities (<10 −2 A/cm 2 ) high thermal sensitivities are reached (>4.75 mV/K, with a maximum value of 5.31 mV/K at 10 −3 A/cm 2 of current density) which is remarkably above the sensitivity obtained by other semiconducting material devices. Furthermore, the deviation of sensitivity from the theoretic model is attributed to the relatively higher ideality factor value. Highlights: The feasibility of Schottky–pn junction diamond diode as temperature sensor was confirmed. Three types of current transport mechanisms are found at different forward bias voltages. A smaller current density corresponds to a higher sensitivity, resulting in a maximum of 5.31 mV/K.