Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors. (December 2022)

• Record Type: Journal Article
• Authors: Xu, Hongyuan; Wang, Xu; Hu, Daobing; Zheng, Feng; Xiao, Juncheng; Lu, Lei; Zhang, Shengdong
• Is Part Of: Materials science in semiconductor processing. Volume 152(2023)
• Publication Date: 2022-12
• Subjects: Blue laser diode annealing -- Bottom gate; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.107113
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The low-temperature poly-Si (LTPS) thin-film transistor (TFT) with bottom-gate architecture was successfully developed using the blue laser diode annealing (BLDA) technology. The amorphous silicon (a-Si) was successfully recrystallized by BLDA into LTPS with grain sizes ranging from 0.1 μm to 0.3 μm. With the proper pre-dehydration treatment of a-Si and optimized BLDA conditions, the bottom-gate LTPS TFTs achieved superior performance than a-Si TFTs, including a mobility up to 15.87 cm 2 /Vs. Moreover, such BLDA-enabled bottom-gate LTPS TFT is fully compatible with the incumbent a-Si production line, thus providing a new cost-efficient technology for large-area electronics.