Ab initio quantum transport simulations of monolayer GeS nanoribbons. (November 2022)

• Record Type: Journal Article
• Authors: Matić, Mislav; Poljak, Mirko
• Is Part Of: Solid-state electronics. Volume 197(2022)
• Publication Date: 2022-11
• Subjects: Quantum transport -- non-equilibrium Green's function (NEGF) -- Density functional theory (DFT) -- Maximally-localized Wannier functions (MLWF) -- GeS -- Nanoribbon; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108460
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Ab initio quantum transport simulation of ultra-scaled GeS nanoribbons (GeSNR) Scaling down GeS nanoribbon width decreases the performance of GeSNR FETs. Good switching performance of GeSNR FETs for digital logic application. Abstract: Monolayer germanium monosulfide (GeS) was recently identified as one of the most promising 2D materials for ultra-scaled FETs. While sub-10 nm monolayer GeS FETs were studied by quantum transport, very little is known about GeS nanoribbons (GeSNRs) or GeSNR FET performance. In this work, we employ quantum transport and Hamiltonians with an orbital resolution to study the electronic, transport, and ballistic device properties of sub-4 nm-wide and ∼15 nm-long GeSNRs. While ultra-scaled GeSNR FETs exhibit ION / IOFF of at least ∼7×10 5, indicating good switching performance, they also offer modest ballistic ION values of up to ∼1.2 mA/μm.