DC and RF/analog performances of split source horizontal pocket and hetero stack TFETs considering interface trap charges: A simulation study. (October 2022)

• Record Type: Journal Article
• Authors: Tiwari, Shreyas; Saha, Rajesh
• Is Part Of: Microelectronics and reliability. Volume 137(2022)
• Publication Date: 2022-10
• Subjects: Hetero stack -- Horizontal pocket -- Interface trap charges -- Tunnel field effect transistor; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2022.114780
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This work investigates the impact of different types of interface trap charges (ITCs) on electrical parameters of split source horizontal pocket Z shape TFET (ZHP-TFET) and Hetero Stack TFET (HS-TFET) using TCAD simulator. The acceptor type Uniform/Gaussian ITCs are considered at the oxide and semiconductor material interface. The effect of ITCs on transfer characteristics, energy band diagram (at ON, OFF, and ambipolar states), electron density, electron velocity, recombination rate, and electric field are reported for both the TFETs. Furthermore, the various RF/analog parameters like transconductance (gm ), gate capacitance (CGG ), cut-off frequency (fT ), transconductance generation factor (TGF), and transconductance frequency product (TFP) are highlighted in the presence of ITCs for both the structures of TFET. Finally, the linearity parameters like VIP2, VIP3, IIP3, and IMD3 are extracted considering ITCs for both the structures. Simulation result reveals that the various DC, RF/analog, and linearity parameters in ZHP-TFET are more immunes towards different types of ITCs than HS-TFET. It is seen that ZHP-TFET is favorable in terms of DC and RF/analog performances compared to HS-TFET, even in the presence of ITCs. Moreover, a comparative study of various Figure of Merits (FoMs) for ZHP-TFET with existing literature is presented. Highlights: DC and RF/analog parameters are degraded in presence of ITCs for HS-TFET. The effect of ITCs is negligible in ZHP-TFET. The ZHP-TFET possesses maximum cut off frequency of 68.3 GHz with SS of 35.1 mV/dec.