Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes. (October 2021)

• Record Type: Journal Article
• Authors: Zhu, Min; Ren, Yuan; Zhou, Leidang; Chen, Jiaxiang; Guo, Haowen; Zhu, Liqi; Chen, Baile; Chen, Liang; Lu, Xing; Zou, Xinbo
• Is Part Of: Microelectronics and reliability. Volume 125(2021)
• Publication Date: 2021-10
• Subjects: Deep level traps -- GaN Schottky barrier diode -- Low frequency noise -- Neutron irradiation; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2021.114345
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Temperature-dependent electrical characteristics were explicitly investigated for a 400-μm diameter neutron-irradiated (NI) GaN Schottky barrier diode (SBD). Based on C-V measurements, a marked decrease in electron concentration has been revealed for the NI diode compared with the pristine sample, suggesting a thermal-enhanced carrier removal effect. Neutron irradiation causes noticeable Schottky barrier height inhomogeneity, which was studied by a two-barrier model. Data indicates that neutron irradiation affects a small but measurable suppression of leakage current as well as low frequency noise level. Despite a new deep-level trap was identified, the temperature-dependent electrical results specified GaN SBD's outstanding resistance to neutron irradiations and robustness in extreme operation temperatures.