Cite
MLA Citation
Byung Jun Lee et al.. “Gas‐phase chemistry and reactive‐ion etching kinetics for silicon‐based materials in C4F8 + O2 + Ar plasma.” Plasma processes and polymers, vol. 18, no. 7, 2021, p. n/a. http://access.bl.uk/ark:/81055/vdc_100133934687.0x000019