Cite
HARVARD Citation
Lee, B. et al. (2021). Gas‐phase chemistry and reactive‐ion etching kinetics for silicon‐based materials in C4F8 + O2 + Ar plasma. Plasma processes and polymers. 18 (7), p. n/a. [Online].
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Lee, B. et al. (2021). Gas‐phase chemistry and reactive‐ion etching kinetics for silicon‐based materials in C4F8 + O2 + Ar plasma. Plasma processes and polymers. 18 (7), p. n/a. [Online].