An equivalent circuit model of HCI effect for short-channel N-MOSFET. (September 2022)

• Record Type: Journal Article
• Authors: Zhang, Jun-an; Hu, Jinxin; Jiang, Min; Xiao, Yi; Li, Tiehu; Lu, Yunhua; Zhang, Qingwei
• Is Part Of: Microelectronics and reliability. Volume 136(2022)
• Publication Date: 2022-09
• Subjects: Hot carrier injection effect -- Integrated circuits -- Reliability -- Aging; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2022.114626
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The hot carrier injection (HCI) effect is an essential factor for the reliability of N-MOSFET. Under long-term usage time, the HCI effect will affect the threshold voltage, transconductance, saturation drain-source current of N-MOSFET, etc. It will seriously affect the performance and lifetime of products. The current model for HCI effect simulation is mainly by modifying the SPICE model of N-MOSFET, which requires complex experiments and parameter extraction. This paper establishes an HCI effect equivalent circuit model for a 65 nm N-MOSFET. Based on the N-MOSFET model in a 65 nm Process Design Kit (PDK), essential electrical components and arithmetic components (which are provided by EDA tools), this equivalent circuit model achieves the HCI effect simulation. This equivalent circuit model offers five tunable input parameters for the user, which are channel width (W), channel length (L), ambient temperature (Temp), stress time (Year), process corner (fast, typical, slow). The effect of gate-source voltage, drain-source voltage, and gate-drain voltage on HCI effect is included in this model. The simulation results of this model are compared with the measured results in other literatures, and the results are fitted well. Highlights: This equivalent circuit model provides five tunable input parameters, especially the process corner option. The equivalent circuit model is well compatible with EDA tools. The equivalent circuit model is a hybrid of empirical model and physical model. It has high accurate, and the simulation results of this model is well fitted with the measured results in other literatures.